Title :
Study on copper plating solutions for fast filling of through silicon via (TSV) in 3D electronic packaging
Author :
Wu, H. L Henry ; Lee, S. W Ricky
Author_Institution :
EPACK Lab., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
Copper electrodeposition in acidic cupric methanesulfonate electrolyte with organic additives was discussed in this study. The influence of the additives in acidic cupric methanesulfonate bath was studied by means of electrochemical measurement using a rotary electrode and actual TSV copper depositions. The electrochemical parameters including exchange current density and cathodic transfer coefficient of base cupric methanesulfonate electrolyte were successfully determined. Chronoamperometry (CA) was conducted to verify the diffusion time of additives to the surface of electrodes and the corresponding diffusion constants were characterized.
Keywords :
additives; copper; electronics packaging; electroplating; three-dimensional integrated circuits; 3D electronic packaging; TSV copper deposition; acidic cupric methanesulfonate bath; acidic cupric methanesulfonate electrolyte; base cupric methanesulfonate electrolyte; cathodic transfer coefficient; chronoamperometry; copper electrodeposition; copper plating solution; electrochemical measurement; electrochemical parameter; exchange current density; organic additive; rotary electrode; through silicon via filling; Additives; Copper; Current density; Electrodes; Filling; Silicon; Through-silicon vias;
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2011 6th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4577-1387-3
Electronic_ISBN :
2150-5934
DOI :
10.1109/IMPACT.2011.6117173