DocumentCode :
2842142
Title :
Table of contents
fYear :
2012
fDate :
27-30 Aug. 2012
Firstpage :
1
Lastpage :
5
Abstract :
The following topics are dealt with: hybrid integration; resonant tunneling devices; high speed diode technologies; optical components; heterogeneous integration; III-V MOS; quantum dot lasers and technology; HBTs; photodiodes; HEMT technologies; and nanowires.
Keywords :
III-V semiconductors; MIS structures; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; nanowires; optical elements; photodiodes; quantum dot lasers; resonant tunnelling devices; semiconductor quantum dots; HBT; HEMT technologies; III-V MOS; InP; heterogeneous integration; high speed diode technologies; hybrid integration; indium phosphide; nanowires; optical components; photodiodes; quantum dot lasers; resonant tunneling devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
ISSN :
1092-8669
Print_ISBN :
978-1-4673-1725-2
Type :
conf
DOI :
10.1109/ICIPRM.2012.6403301
Filename :
6403301
Link To Document :
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