DocumentCode
2842989
Title
Effects of an InGaP electron barrier layer on 1.55 μm laser diode performance
Author
Abraham, P. ; Piprek, J. ; DenBaars, S.P. ; Wers, J. E Bo
Author_Institution
Dept. of Electron. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
1998
fDate
11-15 May 1998
Firstpage
713
Lastpage
716
Abstract
Temperature sensitive loss mechanisms are known to severely limit the performance of InGaAsP/InP laser diodes emitting at 1.55 μm. In this paper, we report on a simple modification of the classical InGaAsP laser structure to reduce electron leakage from the separate confinement heterostructure (SCH) layer
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor heterojunctions; semiconductor lasers; 1.55 mum; InGaAsP-InGaP-InP; InGaAsP-InP; InGaAsP/InP laser diodes; InGaP electron barrier layer effects; electron leakage; laser diode performance; laser structure modification; separate confinement heterostructure layer; temperature sensitive loss mechanisms; Charge carrier processes; Diode lasers; Electrons; Indium compounds; Indium phosphide; Lattices; Performance loss; Radiative recombination; Temperature sensors; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712741
Filename
712741
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