DocumentCode
2844699
Title
A distributed model of the saturation characteristics of integrated circuit transistors
Author
Dickson, L. ; Happ, W.
Author_Institution
Motorola Semiconductor Products Division, Phoenix, AZ, USA
Volume
X
fYear
1967
fDate
15-17 Feb. 1967
Firstpage
70
Lastpage
71
Keywords
Computational geometry; Dielectric substrates; Dielectric thin films; Electron emission; Equations; Integrated circuit modeling; NASA; Resistors; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1967 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1967.1154520
Filename
1154520
Link To Document