Title :
Electromotive force generation induced by cyclotron resonance in semiconductors
Author :
Okashita, Tomonori ; Kobori, Hiromi ; Ohyama, Tyuzi
Author_Institution :
Dept. of Phys., Osaka Univ., Japan
Abstract :
We report on the electromotive force generation associated with electron cyclotron resonance (ECR) as well as impurity cyclotron resonance (ICR) in n-InGaAs. The observed voltage traces with variation in the magnetic field show similar structure to that of the absorption, and decrease rapidly with increasing temperature. An effect characteristic of the thin films is also observed. Comparing with results for the bulk samples and using thermomagnetic model we demonstrate the mechanism of voltage generation in films, and show the usefulness of this method to study the phonon transportation inside the sample and/or at interfaces between thin film and its substrate, and, what is more, to study resonant absorption
Keywords :
III-V semiconductors; cyclotron resonance; gallium arsenide; indium compounds; photoelectromagnetic effects; semiconductor thin films; thermomagnetic effects; InGaAs; electromotive force generation; electron cyclotron resonance; impurity cyclotron resonance; magnetic field; microwave absorption; n-InGaAs thin film; phonon transport; resonant photoelectromagnetic effect; semiconductor; thermomagnetic model; Absorption; Cyclotrons; Electrons; Impurities; Magnetic fields; Magnetic films; Magnetic resonance; Temperature; Transistors; Voltage;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768385
