Inhomogeneous spatial distribution of shallow impurities in a photoexcited semiconductors

Stark broadening of impurity Zeeman absorption peak is studied from a far-infrared absorption measurement and Monte Carlo calculation. Monte Carlo calculation predicts the difference between the dependence of the Stark broadening on the delay time and on the excitation intensity. The difference is caused from the spatial distribution of the ionized impurity. In the delay time variation of the Stark broadening, spatial correlation between ionized donors and acceptors is induced. The experimental results, however, does not show the difference. The inconsistency would be explained from the hopping of bound carriers