• DocumentCode
    2848019
  • Title

    Computer modeling of a subnanosecond transistor including high level injection effects

  • Author

    Davis, Peter

  • Author_Institution
    Bell Telephone Labs., Inc., Reading, Pa., USA
  • Volume
    XII
  • fYear
    1969
  • fDate
    19-21 Feb. 1969
  • Firstpage
    176
  • Lastpage
    177
  • Abstract
    A new base-widening theory that predicts nonlinear transistor transit times will be presented. These and special measurement techniques have been used in modeling a subnanosecond transistor to predict the switching performance of a 350-ps emitter coupled pair.
  • Keywords
    Circuit testing; Conductivity; Laboratories; Pulse circuits; Schottky diodes; Semiconductor process modeling; Switching circuits; Telephony; Transient analysis; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1969.1154729
  • Filename
    1154729
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2848019