• DocumentCode
    2848663
  • Title

    Projection of delay in Ge and Si high-speed switching circuits

  • Author

    Hachtel, G.

  • Author_Institution
    IBM Corp., Yorktown Heights, N.Y., USA
  • Volume
    XII
  • fYear
    1969
  • fDate
    19-21 Feb. 1969
  • Firstpage
    174
  • Lastpage
    175
  • Abstract
    This paper will describe a 1-dimensional transistor analysis program featuring Fermi statistics, saturated velocity and transient effects that predicts switching delays (loaded, packaged CSEF circuits) Of 50 ps(Ge) and 150 ps(SI) for near-ultimate impurity profiles, and at current densities of 105A/cm2.
  • Keywords
    Capacitance; Circuit simulation; Current density; Delay; Electron mobility; Impurities; Statistics; Switches; Switching circuits; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1969.1154769
  • Filename
    1154769
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2848663