• DocumentCode
    2848699
  • Title

    The interaction of technology and performance in complementary-symmetry MOS integrated circuits

  • Author

    Ahrons, R. ; Gardner, R.

  • Author_Institution
    RCA Electronic Componenets, Somerville, N.J., USA
  • Volume
    XII
  • fYear
    1969
  • fDate
    19-21 Feb. 1969
  • Firstpage
    154
  • Lastpage
    155
  • Abstract
    The technology of complementary MOS has already resulted in significant advantages in circuit simplicity, speed-power, and noise immunization. Future technological improvements to increase device gain, reduce capacity, and increase packing density will make complementary MOS even more attractive. The relationships among device physics, processing technology and performance will be presented.
  • Keywords
    Capacitance; Delay; Equations; Integrated circuit technology; Inverters; MOS integrated circuits; MOSFETs; Switching circuits; Threshold voltage; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1969.1154771
  • Filename
    1154771
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2848699