High-κ HfO2/TiO2/HfO2 multilayer quantum well flash memory devices

Author

Maikap, S. ; Tzeng, P.J. ; Tseng, S.S. ; Wang, T.Y. ; Lin, C.H. ; Lee, H.Y. ; Wang, C.C. ; Tien, T.C. ; Lee, L.S. ; Li, P.W. ; Yang, J.R. ; Tsai, M.J.

Author_Institution

Ind. Technol. Res. Inst., Hsinchu

fYear

2007

fDate

23-25 April 2007

Firstpage

1

Lastpage

2

Abstract

High-kappa HfO₂/TiO₂/HfO₂ multilayer quantum well (MQW) charge storage devices with a large memory window of DeltaV_tap8.1 V, an excellent endurance and a good retention (~9% charge loss at 20degC) are reported. Both program and erase speeds of DeltaV_t>3 V@100 mus are achieved for memory transistors under channel hot carrier injections. Furthermore, quantum well memory capacitors with high-kappa Al₂O₃ as a blocking oxide and high work function metal gate show low leakage current density of ~2.4times10^-7 A/cm²@V_g=-5 V at 125degC and high program/erase speed of DeltaV_FB>2 V@10 mus with a low operation voltage of V_g<5 V.

Keywords

capacitors; current density; flash memories; hafnium compounds; high-k dielectric thin films; leakage currents; quantum well devices; semiconductor quantum wells; titanium compounds; Al₂O₃; HfO₂-TiO₂-HfO₂; MQW charge storage device; blocking oxide; channel hot carrier injections; leakage current density; memory transistors; memory window; multilayer quantum well flash memory devices; program/erase speed; quantum well memory capacitors; temperature 125 C; temperature 20 C; work function metal gate; Capacitors; Electrons; Flash memory; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Hot carrier injection; Low voltage; Nonhomogeneous media; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0584-X

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2007.378900

Filename

4239468