• DocumentCode
    2848821
  • Title

    Novel SONOS-Type Nonvolatile Memory Device with Suitable Band Offset in HfAlO Charge-Trapping Layer

  • Author

    Tsai, Ping-Hung ; Chang-Liao, Kuei-Shu ; Liu, Chu-Yung ; Wang, Tien-Ko ; Tzeng, P.J. ; Lee, L.S. ; Tsai, M.J.

  • Author_Institution
    Nat. Tsing Hua Univ., Hsinchu
  • fYear
    2007
  • fDate
    23-25 April 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Satisfactory operation and reliability characteristics of SONOS-type flash devices are achieved by an optimal Hf/Al content in HfAlO charge-trapping layer. Results indicate that operation performance can be improved by a suitable band offset of HfAlO charge-trapping layer. High-speed operation can be realized by adopting CHEI programming and F-N erasing for NOR flash applications.
  • Keywords
    flash memories; CHEI programming; HfAlO charge-trapping layer; NOR flash applications; SONOS; band offset; nonvolatile memory device; Flash memory; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Laboratories; Nonvolatile memory; Reliability engineering; SONOS devices; Systems engineering and theory; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    1-4244-0584-X
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2007.378901
  • Filename
    4239469
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2848821