Title :
Novel SONOS-Type Nonvolatile Memory Device with Suitable Band Offset in HfAlO Charge-Trapping Layer
Author :
Tsai, Ping-Hung ; Chang-Liao, Kuei-Shu ; Liu, Chu-Yung ; Wang, Tien-Ko ; Tzeng, P.J. ; Lee, L.S. ; Tsai, M.J.
Author_Institution :
Nat. Tsing Hua Univ., Hsinchu
Abstract :
Satisfactory operation and reliability characteristics of SONOS-type flash devices are achieved by an optimal Hf/Al content in HfAlO charge-trapping layer. Results indicate that operation performance can be improved by a suitable band offset of HfAlO charge-trapping layer. High-speed operation can be realized by adopting CHEI programming and F-N erasing for NOR flash applications.
Keywords :
flash memories; CHEI programming; HfAlO charge-trapping layer; NOR flash applications; SONOS; band offset; nonvolatile memory device; Flash memory; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Laboratories; Nonvolatile memory; Reliability engineering; SONOS devices; Systems engineering and theory; Tunneling;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378901
