Criterion of intrinsic charge bistability appearance in double-barrier resonant-tunneling structures

Author

Baranov, Alexander V. ; Dragunov, V.P.

Author_Institution

Dept. of Phys., Novosibirsk State Tech. Univ., Russia

fYear

1998

fDate

1998

Firstpage

20

Lastpage

21

Abstract

The model of intrinsic charge bistability in double-barrier resonant-tunneling structure was modified taking into account an approximate energy dependence of the barrier transmission coefficient and a form of the charge distribution in the quantum well. A criterion of bistability appearance in symmetric structures was obtained and extended to structures with many-valley electron tunneling transport

Keywords

many-valley semiconductors; resonant tunnelling; resonant tunnelling devices; semiconductor quantum wells; space charge; GaSb-AlSb; barrier transmission coefficient; charge distribution; double-barrier resonant-tunneling structures; energy dependence; intrinsic charge bistability; many-valley electron tunneling transport; model; quantum well; symmetric structures; Current-voltage characteristics; Electron emission; Electrostatics; Hysteresis; Physics; Resonance; Resonant tunneling devices; Space charge; State feedback; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of

Conference_Location

Novosibirsk

Print_ISBN

0-7803-4938-5

Type

conf

DOI

10.1109/APEIE.1998.768895

Filename

768895