SiGe/Si HBT Modeling for AMS/RF Applications

Author

Yang, M.T. ; Kuo, Darryl C W ; Chang, Alan K L ; Kuo, C.W. ; Lee, C.Y. ; Chern, G.J. ; Liu, Sally ; Tang, Denny D.

Author_Institution

TSMC, Hsin-Chu

fYear

2007

fDate

23-25 April 2007

Firstpage

1

Lastpage

4

Abstract

SiGe/Si HBT combining the integration and cost benefits of silicon has came of age as an ideal process for wireless/wired communication applications. To encompass both high-speed analog and wireless circuit applications, production-proven Spice model of HBT that allows the great amount of flexibility and provides excellent model accuracy over a broad range of applications is highly desirable. This paper reports on an unitary set of geometry-scalable, wide-band models for the HBTs of 0.18 um BiCMOS technology. Verification of the scalable model is achieved with focus on the correlations of DC, Y-parameter and fT, noise, large-signal and Monte-Carlo of mismatch and statistical covers a wide range of product requirement.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; Monte Carlo methods; SPICE; heterojunction bipolar transistors; radiocommunication; semiconductor device models; silicon; AMS-RF applications; BiCMOS technology; HBT modeling; Monte-Carlo correlation; SiGe-Si; Spice model; Y-parameter; high-speed analog circuit applications; size 0.18 mum; wide-band models; BiCMOS integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Libraries; Logic devices; Predictive models; Radio frequency; Semiconductor device modeling; Silicon germanium; Solid modeling; AMS; HBT; Mextram model; RF; SiGe;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0584-X

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2007.378904

Filename

4239472