Determination of parameters in semiconductors using the Shubnikov-de Haas effect

Author

Kornilovich, A.A.

Author_Institution

Novosibirsk State Tech. Univ., Russia

fYear

1998

fDate

1998

Firstpage

22

Lastpage

23

Abstract

The oscillations of reflection and transmission coefficients of the probing laser radiation (Shubnikov-de Haas (SdH) effect) in low-dimensional GaAs/AlGaAs structures, containing quantum wells, and in degenerate n-InSb at low temperatures (~2 K) were investigated. The possibility of contactless determination of the transport parameters in semiconductors, based on the observations of SdH oscillations at liquid nitrogen temperature, is discussed

Keywords

III-V semiconductors; Shubnikov-de Haas effect; aluminium compounds; carrier density; degenerate semiconductors; electric variables measurement; gallium arsenide; indium compounds; microwave reflectometry; semiconductor quantum wells; 2 K; 77 K; GaAs-AlGaAs; InSb; Shubnikov-de Haas effect; carrier concentration; contactless determination; degenerate n-InSb; low-dimensional GaAs/AlGaAs structures; microwave setup; probing laser radiation; quantum wells; reflection coefficient oscillations; semiconductors; transmission coefficient oscillations; transport parameters; Charge carrier density; Conductivity; Electrons; Extraterrestrial measurements; Frequency; Magnetic fields; Microwave theory and techniques; Optical reflection; Reflectivity; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of

Conference_Location

Novosibirsk

Print_ISBN

0-7803-4938-5

Type

conf

DOI

10.1109/APEIE.1998.768896

Filename

768896