• DocumentCode
    2849285
  • Title

    β- and γ-radiation detectors based on GaAs with deep centres

  • Author

    Koretskaya, O.B. ; Okaevich, L.S. ; Potapov, A.I. ; Tolbanov, O.P.

  • Author_Institution
    Siberian Phys. Tech. Inst., Tomsk, Russia
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    104
  • Lastpage
    105
  • Abstract
    Single and multi-element detectors for γ-radiation (Eγ>0.2 MeV) detection have been developed and investigated. Experimental results are in good agreement with calculation due to the high registration efficiency of the detector structure
  • Keywords
    III-V semiconductors; beta-ray detection; deep levels; gallium arsenide; gamma-ray detection; semiconductor counters; GaAs; amplitude spectrum formation; beta-radiation detectors; compensation; deep centre impurities; gamma-radiation detectors; high registration efficiency; high resistivity structures; microstrip detector; multi-element detectors; single-element detector; Attenuators; Charge carriers; Collimators; Event detection; Gallium arsenide; Gamma ray detection; Gamma ray detectors; Gaussian distribution; Particle tracking; Spatial resolution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    0-7803-4938-5
  • Type

    conf

  • DOI
    10.1109/APEIE.1998.768923
  • Filename
    768923
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2849285