DocumentCode
2849385
Title
Oscillistor sensors with a frequency output based on a silicon structures
Author
Gaman, V.I.
Author_Institution
Tomsk State Univ.
fYear
1998
fDate
1998
Firstpage
133
Lastpage
135
Abstract
We present the results of experimental research and elaboration of new sensors with a frequency output, constructed on the principles of functional electronics engineering with the use of the helical instability of electron-hole plasma in silicon. The sensors execute direct conversion of various physical quantities to oscillations frequency and may be used in computer network process engineering
Keywords
electric sensing devices; elemental semiconductors; magnetic sensors; semiconductor plasma; silicon; temperature sensors; Si; computer network process engineering; direct conversion; electron-hole plasma; frequency output; functional electronics engineering; helical instability; magnetic sensor; oscillistor sensors; silicon structures based; threshold temperature sensor; Frequency; Germanium; Humidity measurement; Magnetic semiconductors; Magnetic sensors; Plasma temperature; Semiconductivity; Silicon; Temperature measurement; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of
Conference_Location
Novosibirsk
Print_ISBN
0-7803-4938-5
Type
conf
DOI
10.1109/APEIE.1998.768930
Filename
768930
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