DocumentCode
2849574
Title
A compact threshold voltage model for the novel high-speed semiconductor device IMOS
Author
Li, Yuchen ; Zhang, Heming ; Hu, Huiyong ; Xu, Xiaobo ; Zhou, Chunyu ; Wang, Bin
Author_Institution
Key Lab. for Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China
fYear
2011
fDate
17-18 Nov. 2011
Firstpage
1
Lastpage
2
Abstract
IMOS allows very sharp subthreshold slopes, down to a few mV/dec. A threshold voltage model is proposed in different distribution of surface electric field and in the condition of avalanche breakdown. Model verification is carried out using ISE. Good agreement is obtained between the model´s calculations and the simulated results.
Keywords
MOSFET; avalanche breakdown; electric fields; semiconductor device breakdown; semiconductor device models; IMOS; ISE; avalanche breakdown; compact threshold voltage model; high-speed semiconductor device; model verification; subthreshold slopes; surface electric field distribution; Analytical models; Avalanche breakdown; Electric fields; Films; Logic gates; Mathematical model; Threshold voltage; IMOS; avalanche breakdown; subthreshold swing; threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location
Tianjin
ISSN
Pending
Print_ISBN
978-1-4577-1998-1
Electronic_ISBN
Pending
Type
conf
DOI
10.1109/EDSSC.2011.6117617
Filename
6117617
Link To Document