DocumentCode
2849656
Title
Design considerations for a high-speed bipolar read-only memory
Author
Bergh, A. ; Barrett, John ; Price, Jack
Author_Institution
Hewlett-Packard Laboratories, Palo Alto, CA, USA
Volume
XIII
fYear
1970
fDate
18-20 Feb. 1970
Firstpage
66
Lastpage
67
Abstract
A monolithic, fully-decoded 1024-bit read-only memory, with less than 50-ns access time and 350-mW power dissipation, will be discussed. The ROM can be bit-organized with a coincident select structure to minimize pin count and address decoders.
Keywords
Circuit synthesis; Decoding; Electronics packaging; Integrated circuit packaging; Inverters; Laboratories; Logic design; Power dissipation; Propagation delay; Read only memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1970.1154838
Filename
1154838
Link To Document