DocumentCode :
2849664
Title :
Amorphization and Templated Recrystallization (ATR) Study for Hybrid Orientation Technology (HOT) using Direct Silicon Bond (DSB) Substrates
Author :
Huang, Yao-Tsung ; Pinto, Angelo ; Lin, Chien-Ting ; Hsu, Che-Hua ; Ramin, Manfred ; Seacrist, Mike ; Ries, Mike ; Matthews, Kenneth ; Nguyen, Billy ; Freeman, Melissa ; Wilks, Bruce ; Stager, Chuck ; Johnson, Charlene ; Denning, Laurie ; Bennett, Joe ; P
Author_Institution :
UMC, Hsin-Chu
fYear :
2007
fDate :
23-25 April 2007
Firstpage :
1
Lastpage :
2
Abstract :
The use of hybrid orientation technology (HOT) with direct silicon bond (DSB) wafers consisting of a (110) crystal orientation layer bonded to a bulk (100) handle wafer provides promising opportunities for easier migration of bulk CMOS designs to higher performance materials. In this work, the integration of shallow-trench-isolation (STI) after amorphization and templated recrystallization (ATR) scheme for converting surface orientation from (110) to (100) was investigated. By optimizing the trade-off between ATR-induced triangular morphology and DSB layer thickness, a 3X holes mobility improvement and 36% drive current gain were achieved for PMOSFETs fabricated on (110) plane using DSB-HOT. In addition, un-loaded ring oscillators fabricated using DSB substrates show a 38% improvement compared with control CMOS on (100) wafers.
Keywords :
CMOS integrated circuits; MOSFET; amorphisation; recrystallisation; silicon; ATR; DSB; HOT; PMOSFET fabrication; STI; amorphization; bulk CMOS designs; current gain; direct silicon bond substrates; hybrid orientation technology; shallow-trench-isolation; templated recrystallization; CMOS technology; Crystalline materials; Diodes; MOSFETs; Ring oscillators; Silicon on insulator technology; Substrates; Surface morphology; Thyristors; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
Type :
conf
DOI :
10.1109/VTSA.2007.378957
Filename :
4239525
Link To Document :
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