Utilizing low forward voltage drop power semiconductors to minimize heat sinking requirements in multichip module DC solid state relays and static switching applications

Author

Mays, L. ; Kime, K.

Author_Institution

Motorola Inc., Phoenix, AZ, USA

fYear

1998

fDate

15-17 Apr 1998

Firstpage

149

Lastpage

154

Abstract

This paper provides a concise overview of the impact of new ultra low RDS(on) MOSFET technology, low V_f Schottky technology, and low V_ce(on) bipolar technology devices as applied to control of low voltage DC power. Device selection criteria and circuit topologies are provided along with empirical and FEA modeling data on heat sinking and power dissipation

Keywords

Schottky diodes; finite element analysis; heat sinks; multichip modules; network topology; power MOSFET; power bipolar transistors; power semiconductor diodes; semiconductor device models; semiconductor device packaging; semiconductor relays; FEA modeling; MOSFET technology; Schottky diodes; Schottky technology; bipolar technology devices; circuit topologies; device selection criteria; heat sinking; heat sinking minimization; low forward voltage drop power semiconductors; low voltage DC power control; multichip module DC solid state relays; multichip module DC static switching applications; power dissipation; Batteries; Heat sinks; Low voltage; MOSFET circuits; Multichip modules; Packaging; Power semiconductor switches; Relays; Solid state circuits; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Multichip Modules and High Density Packaging, 1998. Proceedings. 1998 International Conference on

Conference_Location

Denver, CO

Print_ISBN

0-7803-4850-8

Type

conf

DOI

10.1109/ICMCM.1998.670770

Filename

670770