Over 1-Tbit/s demultiplexing using low-temperature-grown InGaAs/InAlAs multiple quantum wells

Author

Kobayashi, H. ; Takahashi, R. ; Matsuoka, Y. ; Iwamura, H.

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

821

Lastpage

824

Abstract

Optical switching/sampling modules operating in the 1.55 μm band were developed using ultrafast all-optical AND gates made with low-temperature grown InGaAs/InAlAs multiple quantum wells. The modules achieved a response time of 390 fs with a contrast ratio of 25 in a fiber-based experiment. Using the modules, we demonstrated all-optical demultiplexing for signal pulses corresponding to 1.05 Tbit/s and we clearly detected the demultiplexed optical signals

Keywords

III-V semiconductors; aluminium compounds; demultiplexing; electro-optical switches; gallium arsenide; indium compounds; logic gates; quantum well devices; semiconductor growth; semiconductor quantum wells; 390 fs; InGaAs-InAlAs; all-optical demultiplexing; low-temperature-grown InGaAs/InAlAs multiple quantum wells; optical switching/sampling modules; over 1-Tbit/s demultiplexing; ultrafast all-optical AND gates; Absorption; Demultiplexing; Distributed Bragg reflectors; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical pumping; Optical saturation; Quantum well devices; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712793

Filename

712793