DocumentCode
2850441
Title
A simplified VBIC model and SDD implementation for InP DHBT
Author
Jin-Can, Zhang ; Yu-Ming, Zhang ; Hong-Liang, Lu ; Yi-Men, Zhang ; Shi, Yang ; Peng, Yuan
Author_Institution
Key Lab. of Wide Band-Gap Semicond., Mater. & Devices, Xidian Univ., Xi´´an, China
fYear
2011
fDate
17-18 Nov. 2011
Firstpage
1
Lastpage
2
Abstract
A simplified VBIC model for InP double heterojunction bipolar transistors(DHBTs) is presented. It is implemented in Agilent ADS circuit simulator, using a Symbolically Define Device(SDD), and verified by comparing the simulated results with measured data of DC and multi-bias small-signal S parameters for a InGaAs/InP DHBT.
Keywords
II-VI semiconductors; heterojunction bipolar transistors; indium compounds; Agilent ADS circuit simulator; DHBT; InP; SDD implementation; double heterojunction bipolar transistors; multibias small-signal S parameters; simplified VBIC model; symbolically define device; DH-HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit modeling; Mathematical model; Scattering parameters; InP DHBT; SDD; large-signal model; self-heating;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location
Tianjin
ISSN
Pending
Print_ISBN
978-1-4577-1998-1
Electronic_ISBN
Pending
Type
conf
DOI
10.1109/EDSSC.2011.6117662
Filename
6117662
Link To Document