Title :
An accurate short-channel IGFET model for computer-aided circuit design
Author :
Smith, D. ; Linvill, J.
Author_Institution :
Bell Telephone Labs., Inc., Naperville, IL, USA
Abstract :
An improved model for short channel IGFETs representing inherent two-dimensional effects will be described. It features accuracy in both triode and saturation response, yet is simple enough for CAD applications.
Keywords :
Circuit synthesis; Contracts; Equations; Geometry; Laboratories; Length measurement; MOSFETs; Solid modeling; Telephony; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1971 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1971.1154896
