DocumentCode
2850771
Title
Temperature possibilities of GaAs membrane pressure sensor
Author
Baranov, A.V. ; Dragunov, V.P.
Author_Institution
Dept. of Phys., Novosibirsk State Tech. Univ., Russia
fYear
1998
fDate
1998
Firstpage
449
Lastpage
451
Abstract
Results have been given of a calculation and of an experimental study of the GaAs membrane pressure sensor (MPS) characteristics. The analysis of our results shows that GaAs MPS have the sensitivity and output signal only twice smaller than analogous Si MPS with diffusion tensoresistors and closely spaced characteristics for Si MPS with polycrystalline thermoresistors
Keywords
III-V semiconductors; gallium arsenide; microsensors; piezoresistive devices; pressure sensors; GaAs; anisotropic etching; membrane deflection; membrane pressure sensor; output signal; piezoresistors; sensitivity; Anisotropic magnetoresistance; Biomembranes; Bridge circuits; Gallium arsenide; Leakage current; Sensor phenomena and characterization; Silicon; Temperature dependence; Temperature distribution; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of
Conference_Location
Novosibirsk
Print_ISBN
0-7803-4938-5
Type
conf
DOI
10.1109/APEIE.1998.769013
Filename
769013
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