AlGaN-based solar-blind metal-semiconductor-metal photodetectors

Author

Huimin, Shao ; Shilin, Zhang ; Sheng, Xie ; Luhong, Mao ; Weilian, Guo ; Xianjie, Li ; Shunzheng, Yin ; Zhihong, Feng ; Bo, Liu

Author_Institution

Sch. of Electron. & Inf. Eng., Tianjin Univ., Tianjin, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

We reported on the fabrication and characterization of AlGaN metal-semiconductor-metal (MSM) photodetectors (PDs). AlGaN epitaxial material with an Al content of 0.6 were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). Schottky contacts were made with Ni/Pt/Au by the way of standard lift-off technique. We measured the performance of PDs. The cutoff wavelength is 276nm. Ultraviolet/visible contrast is about 3 orders of magnitude. The dark current is about 1nA at 1.5V bias and 1μA at 5.3V bias.

Keywords

III-V semiconductors; MOCVD; Schottky barriers; aluminium compounds; gallium compounds; photodetectors; ultraviolet detectors; wide band gap semiconductors; AlGaN; MOCVD; Schottky contact; current 1 muA; epitaxial material; metalorganic chemical vapor deposition; sapphire substrate; solar-blind MSM PD; solar-blind metal-semiconductor-metal photodetectors; standard lift-off technique; ultraviolet-visible contrast; voltage 1.5 V; voltage 5.3 V; wavelength 276 nm; Aluminum gallium nitride; Annealing; Dark current; Epitaxial growth; Photodetectors; Schottky barriers; AlGaN; Solar-blind; Spectral Responsivity; Ultraviolet photodetector;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117687

Filename

6117687