Dc characteristics of proton radiated SiGe power HBTs at cryogenic temperature

Author

Qin, Guoxuan ; Jiang, Ningyue ; Ma, Jianguo ; Ma, Zhenqiang ; Ma, Pingxi ; Racanelli, Marco

Author_Institution

Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

The dc performances of proton irradiated silicon-germanium (SiGe) power heterojunction bipolar transistors (HBTs) at cryogenic temperature are reported in this work. Large emitter area high-power SiGe HBTs fabricated in a commercial BiCMOS process were irradiated with proton, at different fluences from 1×10¹² p/cm² to 5×10¹³ p/cm². We show that proton radiated SiGe power HBTs are naturally suitable for electronic operations at cryogenic temperature. Specifically, investigation of proton radiation on SiGe power HBTs at liquid nitrogen temperature (77K) indicates a significant potential for space applications. The results demonstrate the potential of SiGe power HBTs in power amplification for wireless applications under severe radiation and extreme temperature environment (cryogenic) even without any intentional radiation hardening.

Keywords

Ge-Si alloys; cryogenic electronics; heterojunction bipolar transistors; power bipolar transistors; proton effects; radiation hardening (electronics); BiCMOS process; Dc characteristic; SiGe; SiGe power HBT; cryogenic temperature; liquid nitrogen temperature; power amplification; power heterojunction bipolar transistor; proton irradiated silicon-germanium; proton radiation; radiation hardening; wireless application; Cryogenics; Heterojunction bipolar transistors; Nitrogen; Protons; Silicon germanium; Temperature; Cryogenic temperature; SiGe power HBTs; dc characteristics; liquid nitrogen; proton radiation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117703

Filename

6117703