DocumentCode
2851699
Title
SCR device with high holding current for on-chip ESD protection
Author
Zhang, Peng ; Wang, Yuan ; Jia, Song ; Zhang, Xing
Author_Institution
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
fYear
2011
fDate
17-18 Nov. 2011
Firstpage
1
Lastpage
2
Abstract
A silicon-controlled rectifier (SCR) device for on-chip ESD protection is proposed. The Anode pad of the device is directly connected to die drain of the embedded nMOS crossing the N-well P-substrate junction of the nMOS to achieve a high holding current. Thus, latch-up immune current of SCR type ESD protection device is achieved by this method.
Keywords
MOS integrated circuits; electrostatic discharge; thyristors; N-well P-substrate junction; SCR device; high holding current; latch-up immune current; nMOS; on-chip ESD protection; silicon-controlled rectifier device; CMOS integrated circuits; Current density; Electrostatic discharges; MOS devices; Stress; System-on-a-chip; Thyristors; ESD; SCR; high holding current; latchup;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location
Tianjin
ISSN
Pending
Print_ISBN
978-1-4577-1998-1
Electronic_ISBN
Pending
Type
conf
DOI
10.1109/EDSSC.2011.6117729
Filename
6117729
Link To Document