DocumentCode
2851908
Title
A novel surface potential-based mobility degradation model of thin-oxide-MOSFET for circuit simulation
Author
Jia, Kan ; Sun, Weifeng ; Shi, Longxing
Author_Institution
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
fYear
2011
fDate
17-18 Nov. 2011
Firstpage
1
Lastpage
2
Abstract
A novel surface potential-based mobility degradation model for thin-oxide-MOSFET is presented. With surface potential, the effective normal electric field can be accurately calculated, and a new mobility expression is developed. Comparison with measured data is also presented to validate our model.
Keywords
MOSFET; circuit simulation; circuit simulation; normal electric field; surface potential-based mobility degradation model; thin-oxide-MOSFET; Data models; Degradation; Electric potential; Integrated circuit modeling; Logic gates; MOSFET circuits; Semiconductor device modeling; Mobility degradation; compact model; surface potential-based; thin-oxide-MOSFET;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location
Tianjin
ISSN
Pending
Print_ISBN
978-1-4577-1998-1
Electronic_ISBN
Pending
Type
conf
DOI
10.1109/EDSSC.2011.6117739
Filename
6117739
Link To Document