DocumentCode
2852822
Title
Effectiveness of strained-Si technology for thin-body MOSFETs
Author
Nuo Xu ; Changhwan Shin ; Andrieu, F. ; Ho, Byron ; Wade Xiong ; Weber, Olivier ; Poiroux, T. ; Bich-Yen Nguyen ; Munkang Choi ; Moroz, Victor ; Faynot, O. ; Tsu-Jae King Liu
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA
fYear
2012
fDate
1-4 Oct. 2012
Firstpage
1
Lastpage
2
Abstract
Strain-induced mobility enhancement in thin-body MOSFETs is studied and the impact of silicon body thickness scaling on piezoresistance coefficients is analyzed to facilitate stress engineering for these advanced transistor structures. Various stressors are benchmarked in terms of their effectiveness to enhance nanometer-gate-length thin-body MOSFET performance.
Keywords
MOSFET; elemental semiconductors; nanoelectronics; silicon; stress-strain relations; Si; advanced transistor structures; nanometer-gate-length thin-body MOSFET performance; piezoresistance coefficients; silicon body thickness scaling; strain-induced mobility enhancement; strained-silicon technology; stress engineering; FinFETs; Logic gates; Silicon; Stress; Substrates; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference (SOI), 2012 IEEE International
Conference_Location
NAPA, CA
ISSN
1078-621X
Print_ISBN
978-1-4673-2690-2
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2012.6404369
Filename
6404369
Link To Document