• DocumentCode
    2852897
  • Title

    Design improvement of L-shaped tunneling field-effect transistors

  • Author

    Sang Wan Kim ; Woo Young Choi ; Min-Chul Sun ; Hyun Woo Kim ; Byung-Gook Park

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Inter-Univ. Semicond. Res. Center (ISRC), Seoul, South Korea
  • fYear
    2012
  • fDate
    1-4 Oct. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    L-shaped tunneling field-effect transistors (TFETs) feature high current drivability and abrupt on-off transition. For further improvement of L-shaped TFETs, tunneling regions become n-type doped in this study. The doping concentration of the tunneling regions is optimized. The proposed novel L-shaped TFETs show higher on-current (Ion) and lower subthreshold swing (SS) than conventional L-shaped TFETs.
  • Keywords
    MOSFET; semiconductor doping; tunnel transistors; L-shaped TFET; L-shaped tunneling field-effect transistor design; doping concentration; lower subthreshold swing; n-type doped tunneling regions; on-off transition; Doping; Educational institutions; Logic gates; Photonic band gap; Silicon; Transistors; Tunneling; TFET; steep slope; subthreshold swing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2012 IEEE International
  • Conference_Location
    NAPA, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4673-2690-2
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2012.6404373
  • Filename
    6404373
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2852897