Title :
Expanded Thermal Model for IGBT Modules
Author :
Lu, B. ; Hudgins, J.L. ; Bryant, A.T. ; Santi, E. ; Palmer, P.R.
Author_Institution :
Dept. of Electr. Eng., Nebraska Univ., Lincoln, NE
Abstract :
Heat dissipation problems with simultaneous heat generation in IGBT modules are calculated and simulated based on two developed thermal models. One is the analytical thermal model, which is based on Fourier series method. The other is a finite difference model, which relies on the numerical solutions method. The result of two models has been compared. The difference between them has been illustrated and more reliable model has been chosen for more complicate thermal calculation. In order to achieve more accurate temperature distribution, transient thermal response of certain IGBT module has been simulated with extended thermal models
Keywords :
Fourier series; cooling; finite difference methods; insulated gate bipolar transistors; modules; semiconductor device models; semiconductor device packaging; thermal management (packaging); Fourier series; finite-difference method; heat dissipation; heat generation; insulated gate bipolar transistor; power cycles; thermal calculation; thermal models; Circuit simulation; Electronic packaging thermal management; Finite difference methods; Insulated gate bipolar transistors; Power dissipation; Power electronics; Semiconductor device packaging; Semiconductor materials; Temperature distribution; Thermal expansion; Finite-difference method; Fourier-series; IGBT; modules; packaging; power cycles; thermal models;
Conference_Titel :
Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
1-4244-0364-2
Electronic_ISBN :
0197-2618
DOI :
10.1109/IAS.2006.256614
