Title :
Storage array and sense/refresh circuit for single-transistor memory cells
Author :
Stein, K. ; Sihling, A. ; Doering, E.
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
The read signals of dynamic single-transistor MOS memory cells decrease with decreasing cell area. This paper will discuss a noise-compensating array and sensitive refresh amplifiers allowing a minimum cell area of 1600 μm2(2.6 mil2).
Keywords :
Capacitors; Circuit analysis computing; Electrodes; MOSFETs; Parasitic capacitance; Silicon; Solid state circuits; Transistors; Video recording; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1972.1155066
