A high precision 2nd order bandpass continuous time filter realised with novel OTA-C integrators in GaAs MESFET technology

Author

Visocchi, P. ; Taylor, J. ; Betts, A. ; Haigh, D.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll., London, UK

Volume

1

fYear

1992

fDate

10-13 May 1992

Firstpage

216

Abstract

A preliminary investigation into the effects of excess phase on the accuracy of the amplitude and group delay responses of a second-order operational-transconductance-amplifier-C (OTA-C) state-variable bandpass filter, used as one section of a high-order, high-precision filter, is reported. A comparison is made of using ideal OTA-Cs and introducing excess phase by means of first-order RC phase shift networks. A recently reported integrator using GaAs MESFET technology suitable for a second-order bandpass filter is also compared

Keywords

III-V semiconductors; Schottky gate field effect transistors; active filters; active networks; band-pass filters; field effect integrated circuits; gallium arsenide; integrating circuits; radiofrequency filters; GaAs; MESFET; OTA-C integrators; RC phase shift networks; amplitude response; bandpass filters; continuous time filter; excess phase; group delay responses; high-precision filter; operational-transconductance-amplifier-C; second-order bandpass filter; semiconductors; state-variable bandpass filter; Band pass filters; Bandwidth; Capacitors; Delay; Educational institutions; Frequency; Gallium arsenide; MESFETs; Mobile communication; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0593-0

Type

conf

DOI

10.1109/ISCAS.1992.229975

Filename

229975