DocumentCode
2854431
Title
Ion-implanted complementary MOS transistors in low-voltage circuits
Author
Swanson, R. ; Meindl, J.
Author_Institution
Stanford University, Stanford, CA, USA
Volume
XV
fYear
1972
fDate
16-18 Feb. 1972
Firstpage
192
Lastpage
193
Abstract
Ion-implanted complementary MOS integrated circuits which can operate at supply voltages less than 0.4 V have been fabricated. Their behavior will be described by a new theory of MOST characteristics which is valid near threshold.
Keywords
Boron; CMOS integrated circuits; CMOS technology; Digital circuits; Equations; Integrated circuit technology; Inverters; Low voltage; MOSFETs; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1972.1155118
Filename
1155118
Link To Document