DocumentCode
2854479
Title
Two-dimensional simulation of devices with IET and allowing impact ionization
Author
Prokhorov, E.D. ; Pavlenko, D.V.
Author_Institution
V.N. Karazin Kharkov Nat. Univ.
Volume
2
fYear
2005
fDate
16-16 Sept. 2005
Firstpage
482
Abstract
Proposed in this paper is the design of numerical model of the semiconductor devices on basis of IET (Intervalley Electron Transition), allowing impact ionization. The approach ensures iterative process stability under conditions of impact ionization
Keywords
impact ionisation; iterative methods; semiconductor devices; IET; impact ionization; intervalley electron transition; iterative process stability; numerical model; semiconductor device design; Avalanche breakdown; Double heterojunction bipolar transistors; Electron devices; Gallium arsenide; Helium; Heterojunction bipolar transistors; Impact ionization; Neodymium; Semiconductor diodes; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
966-7968-80-4
Type
conf
DOI
10.1109/CRMICO.2005.1565001
Filename
1565001
Link To Document