DocumentCode
2854585
Title
Multi-level inverter with H-bridge clamp circuit for single-phase three-wire grid connection suitable for Super-junction/SiC MOSFET
Author
Noge, Yuichi ; Itoh, Jun-Ichi
Author_Institution
Department of Electrical engineering, Nagaoka University of Technology, Niigata, Japan
Volume
1
fYear
2012
fDate
2-5 June 2012
Firstpage
88
Lastpage
93
Abstract
A multilevel inverter with H-bridge clamp circuit is proposed for single-phase three-wire (1P3W) utility connected applications such as PV system. The proposed inverter consists of two n-level inverters and a H-bridge clamp circuit. The proposed inverter features high compatibility with next generation semiconductors because the uses of a high voltage H-bridge clamp circuit at grid frequency switching. The proposed inverter requires only 12 controllable switches to obtain a 5-level output voltage. In conventional multi-level converters with grounded neutral point of the DC-bus, 16 switches are required. The control strategy is discussed in this paper. Moreover, a numerical parameter design method is considered and then verified by simulation. Finally, conduction loss of the clamp circuit is shown lower than that comparing with the conventional active neutral point clamped (ANPC) inverter using Super-junction MOSFET or SiC MOSFET.
Keywords
Capacitors; Clamps; Inverters; MOSFET circuits; Silicon carbide; Switches; Switching circuits; Active neutral point clamped (ANPC); Multi-level inverter; Photovoltaic (PV) systems; SiC MOSFET; Single-phase three-wire (1P3W) connection; Transformerless;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Motion Control Conference (IPEMC), 2012 7th International
Conference_Location
Harbin, China
Print_ISBN
978-1-4577-2085-7
Type
conf
DOI
10.1109/IPEMC.2012.6258861
Filename
6258861
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