• DocumentCode
    2854789
  • Title

    Application of GaAs Schottky-gate FETs in microwave amplifiers

  • Author

    Liechti, C. ; Tillman, R.

  • Author_Institution
    Hewlett-Packard Co., Palo Alto, CA, USA
  • Volume
    XVI
  • fYear
    1973
  • fDate
    14-16 Feb. 1973
  • Firstpage
    74
  • Lastpage
    75
  • Abstract
    Wideband input and output coupling networks for microwave amplifier stages incorporating GaAs MESFETs with 1-μm Schottky-gate will be described. Third-order intermodulation distortion of the transistors will also be discussed.
  • Keywords
    Broadband amplifiers; FETs; Gallium arsenide; Impedance matching; Inductance; MESFETs; Microwave amplifiers; Microwave filters; Noise figure; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1973.1155140
  • Filename
    1155140
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2854789