• DocumentCode
    2854892
  • Title

    High-density static bipolar memory

  • Author

    Wiedmann, S.

  • Author_Institution
    IBM Laboratories, Boeblingen, Germany
  • Volume
    XVI
  • fYear
    1973
  • fDate
    14-16 Feb. 1973
  • Firstpage
    56
  • Lastpage
    57
  • Abstract
    A static bipolar memory approach with a 3.1-mil2cell in standard technology affording a 4k-bit chip with 50-ns access time at 0.1 μW/bit standby power will be described.
  • Keywords
    Current supplies; Drives; FETs; Joining processes; Laboratories; Logic circuits; Logic devices; Metallization; Power dissipation; Read-write memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1973.1155148
  • Filename
    1155148
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2854892