DocumentCode :
2855428
Title :
Modeling of single-electron 1D and 2D arrays using physical models
Author :
Abramov, I.I. ; Ignatenko, S.A. ; Lavrinovich, A.M. ; Pavlenok, S.N.
Author_Institution :
Belarusian State Univ. of Informatics & Radioelectron., Minsk
Volume :
2
fYear :
2005
fDate :
16-16 Sept. 2005
Firstpage :
619
Abstract :
Described in this paper are the results of single-electron 1D and 2D arrays simulation using physical models modified taking into account the influence of cross-section sizes (spatial quantization) and parasitic co-tunneling effect
Keywords :
single electron devices; tunnelling; 1D-and-2D array; cross-section size; parasitic cotunneling effect; physical model; single-electron; Artificial intelligence; Helium; IEEE catalog; Microwave technology; Nanoscale devices; Organizing; Quantization; Thin film transistors; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-80-4
Type :
conf
DOI :
10.1109/CRMICO.2005.1565062
Filename :
1565062
Link To Document :
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