• DocumentCode
    2855907
  • Title

    A device characterization and circuit design procedure for realizing high-power millimeter-wave IMPATT diode amplifiers

  • Author

    Peterson, D.

  • Author_Institution
    MIT Lincoln Laboratory, Lexington, MA, USA
  • Volume
    XVI
  • fYear
    1973
  • fDate
    14-16 Feb. 1973
  • Firstpage
    44
  • Lastpage
    45
  • Abstract
    A characterization technique affording realization of Ka-band (33-42 GHz) IMPATT amplifiers exhibiting 4% generation efficiencies, 200-mW added power and 5-GHz bandwidths with device temperatures of 200°C will be described.
  • Keywords
    Bandwidth; Character generation; Circuit synthesis; Diodes; High power amplifiers; Millimeter wave circuits; Millimeter wave technology; Power amplifiers; Power generation; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1973.1155216
  • Filename
    1155216
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2855907