Title :
Wunsch-Bell criterion dependency for silicon FET
Author :
Gordienko, Yu.E. ; Zuev, S.A. ; Starostenko, V.V. ; Tereshchenko, V.Yu. ; Shadrin, A.A. ; Osadchuk, A.E.
Author_Institution :
Kharkov Nat. Univ. of Radioeng.
Abstract :
The results of electrothermal process calculations in FET are given. Calculations performed in avalanche breakdown mode till Au (used as gate substrate) melting point and achieved in any lattice point in active FET area. Discrete FET model is used to perform calculations
Keywords :
avalanche breakdown; field effect transistors; melting point; FET; Wunsch-Bell criterion; avalanche breakdown mode; electrothermal process calculation; field effect transistor; lattice point; melting point; EMP radiation effects; FETs; IEEE catalog; Microwave technology; Organizing; Semiconductor devices; Semiconductor diodes; Solid state circuits; Threshold voltage; Topology;
Conference_Titel :
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-80-4
DOI :
10.1109/CRMICO.2005.1565098
