Title :
Performance of multilayer vapor-phase epitaxial complementary silicon millimeter-wave IMPATT diodes
Author :
Swartz, G. ; Chiang, Yu-Hsuan ; Wen, Cheng ; Weller, K.
Author_Institution :
RCA David Sarnoff Research Center, Princeton, NJ, USA
Abstract :
Recent results obtained on silicon complementary (N+PP+) IMPATT oscillators will be presented. Output power of 700 mW at 9.1% efficiency has been achieved at 30 GHz in a tunable disc cavity circuit. Measured FM noise parameter, M, of P-type diodes was found to be 3-dB less than measured value of M for N-type diodes.
Keywords :
Circuit noise; Diodes; Millimeter wave circuits; Millimeter wave measurements; Noise measurement; Nonhomogeneous media; Oscillators; Power generation; Silicon; Tunable circuits and devices;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1973.1155227
