Contactless methods and the equipment for measurement of semiconductor electrophysical parameters

Diagnostics of electrophysical parameters of semiconductor materials is a necessary part of the manufacture technology both semi-conductor materials, and various devices on their basis. Contactless not destroying checking methods of the devices and installations are most suitable for these purposes. Installations and measuring resonators of the microwave range for contact determination of electrophysical parameters of semi-conductor materials (type of conductivity, specific resistance, and time of non-equilibrium charge carrier´s life) in 80-3000 K temperature interval are offered. At high localness of measurements at the microwave range with the use of the resonator method the influence of zones bends arising on a semi-conductor surface at cooling, on results of definition of specific resistance volumetric and time of photo carriers life are described. Results of an experimental research of electrophysical and recombination characteristics of semiconductor materials are given