Title :
The effect of carrier heating on the noise spectral densities for double-gate MOSFET devices
Author :
Nae, B. ; Lazaro, A. ; Ritzenthaler, R. ; Iniguez, B.
Author_Institution :
Dept. d´´Eng. Electron., Electr. i Autom., Univ. Rovira i Virgili, Tarragona, Spain
Abstract :
In this paper, we study the importance of the carrier heating effects on the noise performances of symmetric Double-Gate (DG) MOSFET devices. We present results based on the compact analytical determination of the gate and drain noise spectrum densities and their correlation in DG MOSFETs.
Keywords :
MOSFET; semiconductor device noise; carrier heating; double-gate MOSFET devices; drain noise spectrum densities; gate noise spectrum densities; Correlation; Electric fields; Heating; Logic gates; MOSFET circuits; Noise; Transistors; MOSFET; compact modeling; double-gate; noise;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744163
