Electrical and chemical characterization of high pressure sputtered scandium oxide for memory applications

Author

Feijoo, P.C. ; Toledano-Luque, M. ; Prado, Á Del ; Andrés, E. San ; Lucía, M.L. ; Fierro, J.L.G.

Author_Institution

Dept. de Fis. Aplic. III: Electr. y Electron., Univ. Complutense de Madrid, Madrid, Spain

fYear

2011

fDate

8-11 Feb. 2011

Firstpage

1

Lastpage

3

Abstract

Scandium oxide was deposited by means of high pressure sputtering in the same conditions on differently prepared (100) Si substrates: chemical oxide, nitrided Si and deposited silicon nitride. Time-of-flight secondary ion mass spectroscopy and X-ray photoemission spectroscopy show that polycrystalline Sc₂O₃ films were grown with a composition which is constant with depth. According to Capacitance-Voltage hysteresis measurements, nitrided Si or deposited SiN_x proved to present a lower density of defects in the interface as compared to RCA native oxide.

Keywords

X-ray photoelectron spectra; flash memories; hysteresis; scandium compounds; silicon compounds; sputter deposition; time of flight mass spectra; Sc₂O₃; SiH_x; SiN_x; SiO_x; X-ray photoemission spectroscopy; capacitance-voltage hysteresis; chemical characterization; electrical characterization; high pressure sputtering; memory applications; silicon nitride; time-of-flight secondary ion mass spectroscopy; Chemicals; Films; Hysteresis; Logic gates; Silicon; Sputtering; Substrates; high pressure sputtering; high-k; scandium oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2011 Spanish Conference on

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4244-7863-7

Type

conf

DOI

10.1109/SCED.2011.5744185

Filename

5744185