Title :
Electrical and chemical characterization of high pressure sputtered scandium oxide for memory applications
Author :
Feijoo, P.C. ; Toledano-Luque, M. ; Prado, Á Del ; Andrés, E. San ; Lucía, M.L. ; Fierro, J.L.G.
Author_Institution :
Dept. de Fis. Aplic. III: Electr. y Electron., Univ. Complutense de Madrid, Madrid, Spain
Abstract :
Scandium oxide was deposited by means of high pressure sputtering in the same conditions on differently prepared (100) Si substrates: chemical oxide, nitrided Si and deposited silicon nitride. Time-of-flight secondary ion mass spectroscopy and X-ray photoemission spectroscopy show that polycrystalline Sc2O3 films were grown with a composition which is constant with depth. According to Capacitance-Voltage hysteresis measurements, nitrided Si or deposited SiNx proved to present a lower density of defects in the interface as compared to RCA native oxide.
Keywords :
X-ray photoelectron spectra; flash memories; hysteresis; scandium compounds; silicon compounds; sputter deposition; time of flight mass spectra; Sc2O3; SiHx; SiNx; SiOx; X-ray photoemission spectroscopy; capacitance-voltage hysteresis; chemical characterization; electrical characterization; high pressure sputtering; memory applications; silicon nitride; time-of-flight secondary ion mass spectroscopy; Chemicals; Films; Hysteresis; Logic gates; Silicon; Sputtering; Substrates; high pressure sputtering; high-k; scandium oxide;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744185
