DocumentCode :
2857626
Title :
Integration of III-V materials on silicon substrates for multi-junction solar cell applications
Author :
García-Tabarés, E. ; García, I. ; Rey-Stolle, I. ; Algora, C. ; Martín, D.
Author_Institution :
E.T.S.I. Telecomun., Inst. de Energia Solar (UPM), Madrid, Spain
fYear :
2011
fDate :
8-11 Feb. 2011
Firstpage :
1
Lastpage :
4
Abstract :
The work presented here aims to reduce the cost of multijunction solar cell technology by developing ways to manufacture them on cheap substrates such as silicon. In particular, our main objective is the growth of III-V semiconductors on silicon substrates for photovoltaic applications. The goal is to create a GaAsP/Si virtual substrates onto which other III-V cells could be integrated with an interesting efficiency potential. This technology involves several challenges due to the difficulty of growing III-V materials on silicon. In this paper, our first work done aimed at developing such structure is presented. It was focused on the development of phosphorus diffusion models on silicon and on the preparation of an optimal silicon surface to grow on it III-V materials.
Keywords :
III-V semiconductors; MOCVD; diffusion; gallium arsenide; semiconductor growth; solar cells; GaAsP-Si; III-V cell; III-V material integration; III-V semiconductor; cheap substrates; cost reduction; multijunction solar cell application; optimal silicon surface preparation; phosphorus diffusion model; photovoltaic application; silicon substrates; virtual substrates; Epitaxial growth; Epitaxial layers; Photonic band gap; Photovoltaic cells; Silicon; Substrates; III/V on Si heteroepitaxy; Metal-Organic Vapor Phase Epitaxy (MOVPE); metamorphic; multi-junction solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
Type :
conf
DOI :
10.1109/SCED.2011.5744190
Filename :
5744190
Link To Document :
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