Title :
Analysis and Design of GaInSn Current Limiter
Author :
Wu, Huaren ; Li, Xiaohui ; Zhang, Min ; Stade, D. ; Schau, H.
Author_Institution :
Dept. of Electr. Eng., Nanjing Normal Univ.
Abstract :
The 3-D field simulation of magneto-fluid in GaInSn current limiter was performed with finite element method (FEM). The magnetic forces were calculated and then turbulence driven by the magnetic forces was simulated. The results of the turbulent simulation coincide with that of the experiments. The current limit principle of the current limiter was analyzed. Measures for improving the GaInSn current limiter were presented according to the results of simulations and experiments
Keywords :
III-V semiconductors; circuit simulation; current limiters; finite element analysis; gallium compounds; indium compounds; 3D field simulation; FEM; GaInSn; current limiter design; current limiters; finite element method; liquid flow; magnetic forces calculation; magneto-fluid; short circuit currents; turbulence driven; Analytical models; Circuit simulation; Containers; Current limiters; Insulation; Irrigation; Magnetic analysis; Magnetic forces; Short circuit currents; Voltage; Current limiters; Liquid flow; Short circuit currents;
Conference_Titel :
Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
1-4244-0364-2
Electronic_ISBN :
0197-2618
DOI :
10.1109/IAS.2006.256910
