Optoelectronic properties in InAs/GaAs quantum dots arrays systems

Author

Rodríguez, A. Luque ; Rodríguez-Bolívar, S. ; Gómez-Campos, F.M. ; Villanueva, J. A López ; Tejada, J. A Jiménez ; García, T. ; Carceller, J.E.

Author_Institution

Dept. de Electron. y Tecnol. de los Comput., Univ. de Granada, Granada, Spain

fYear

2011

fDate

8-11 Feb. 2011

Firstpage

1

Lastpage

4

Abstract

A study of the physics of electronic states in cubic InAs quantum dot periodic nanostructures embedded in GaAs is presented. The miniband structure of electron states in the conduction band is related to the size and density of the quantum dots. The effect of strain is also taken into account in the simulations. The photon-electron absorption coefficient is obtained for different quantum dot configurations and different light polarization as well.

Keywords

III-V semiconductors; absorption coefficients; conduction bands; gallium arsenide; indium compounds; infrared spectra; nanostructured materials; photoexcitation; semiconductor quantum dots; InAs-GaAs; conduction band; electron states; electronic states; light polarization; miniband structure; optoelectronic properties; photon-electron absorption coefficient; quantum dot arrays; quantum dot periodic nanostructures; Absorption; Gallium arsenide; Mathematical model; Optical polarization; Photonics; Photovoltaic cells; Quantum dots; miniband; nanostructues; optical absorption; quantum dot;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2011 Spanish Conference on

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4244-7863-7

Type

conf

DOI

10.1109/SCED.2011.5744240

Filename

5744240