• DocumentCode
    2858608
  • Title

    High power conversion technologies & trend

  • Author

    Ying, Jianping ; Gan, Hongjian

  • Author_Institution
    Delta Electron. (Shanghai) Co., Ltd., Shanghai, China
  • Volume
    3
  • fYear
    2012
  • fDate
    2-5 June 2012
  • Firstpage
    1766
  • Lastpage
    1770
  • Abstract
    For high power application, high voltage converter technologies are very important. In this paper, various high power converter technologies are introduced and compared. The paper proposes a simple, reliable and cost effective IGBT series technology with effective over voltage and short circuit protection. Together with 3-level inverter technology, IGBT series technology is able to provide transformer-less solution for MVD, HVDC and other high voltage application. Compared with other transform-less solution such as MMC, it is more reliable and cost effective.
  • Keywords
    insulated gate bipolar transistors; invertors; power conversion; power convertors; 3-level inverter technology; HVDC; IGBT series technology; MVD; effective over voltage; high power application; high power conversion technologies; high voltage converter technologies; short circuit protection; transform-less solution; transformer-less solution; trend; Capacitors; Insulated gate bipolar transistors; Inverters; Power conversion; Reliability; Topology; Voltage control; 3-level converter; CHB; IGBT series; MMC; MVD;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Motion Control Conference (IPEMC), 2012 7th International
  • Conference_Location
    Harbin
  • Print_ISBN
    978-1-4577-2085-7
  • Type

    conf

  • DOI
    10.1109/IPEMC.2012.6259104
  • Filename
    6259104