Title :
Startup transients and differences between P+N and N+P structures as determined by an analysis of TRAPATT diode-circuit interactions
Author :
Bogan, Z. ; Frey, Jesse
Author_Institution :
Cornell University, Ithaca, NY, USA
Abstract :
The transient behavior of P+N and N+P TRAPATT diodes will be compared for particular real-circuit environments to explain the higher efficiencies observed at lower current densities for N+P diodes, and provide a better understanding of startup transients associated with both types.
Keywords :
Charge carrier processes; Circuit analysis; Circuit optimization; Electron traps; Frequency; Oscillators; Packaging; Power system transients; Semiconductor diodes; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
DOI :
10.1109/ISSCC.1975.1155422
